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16 April 2001 Difficulties making reliability predictions for Si, GaAs, and InP
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The lifetime prediction model that has been developed for brittle materials implicitly assumes an initial flaw population from which, under the influence of an applied or residual stress, cracks grow to failure. The relationship between crack growth rate and stress intensity factor is assumed to be a power law expression. While the tests used to predict lifetimes, i.e., Weibull distribution, inert strength, and dynamic fatigue, can all be applied to semiconductors without apparent discrepancies, analysis of the crack growth behavior in Si, GaAs, and InP shows that assumptions in the lifetime model are violated for these materials. Consequently, lifetime predictions based upon this model will be wrong.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grady S. White and Linda M. Braun "Difficulties making reliability predictions for Si, GaAs, and InP", Proc. SPIE 4215, Optical Fiber and Fiber Component Mechanical Reliability and Testing, (16 April 2001);

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