Fabrication Of MOS Field Effect Transistors In Laser Recrystallized Silicon Films On A Lithium Tantalate Substrate

R. E. Reedy; S. H. Lee

doi:10.1117/12.936147

15 April 1983 Fabrication Of MOS Field Effect Transistors In Laser Recrystallized Silicon Films On A Lithium Tantalate Substrate

R. E. Reedy, S. H. Lee

Author Affiliations +

Proceedings Volume 0422, 10th Intl Optical Computing Conf; (1983) https://doi.org/10.1117/12.936147
Event: 10th International Optical Computing Conference, 1983, Cambridge, United States

Abstract

We report the fabrication of n-channel Metal-Oxide-Semiconductor Field-Effect-Transistors (n-MOSFETs) in laser recrystallized silicon films on 'a lithium tantalate (LiTa03) substrate with an intervening silicon dioxide layer. Constraints on film thickness and laser scan conditions are described which lead to melting of the silicon film without damaging the substrate. Electrical characteristics of the n-MOSFETs are presented, and the devices are shown to exhibit an electron channel mobility of 50 cm²/V-sec. Theoretical operation of the n-MOSFETs as integrated photodetectors of substrate light is derived and compared to observed behavior.

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R. E. Reedy and S. H. Lee "Fabrication Of MOS Field Effect Transistors In Laser Recrystallized Silicon Films On A Lithium Tantalate Substrate", Proc. SPIE 0422, 10th Intl Optical Computing Conf, (15 April 1983); https://doi.org/10.1117/12.936147

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