3 October 2000 Advanced photonic sensors of heterojunctions of TiO2/PS/p-Si
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Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401734
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China
Abstract
The photonics sensor with heterojunctions of TiO2/PS/p-Si was prepared by coating the nano-sized thin film of TiO2 on surface of the porous silicon substrate and was characterized by the surface photovoltage spectroscopy. The results showed that the photovoltage of porous silicon (PS/p- Si) was greatly increased two to three orders of magnitude by coating TiO2 thin film. The enhancement of photovoltage may be attributed to the efficient absorption spectrum from near infrared till ultraviolet light of the double heterojunctions of TiO2/PS/p-Si and the effective separation of the photoproduced electron-hole pairs due to the increment of the built-in electric field of the quasi- intrinsic porous silicon. Moreover, the back electric field generated by the potential difference between PS and p-Si may resist the diffusion of minority carrier toward the electrode, leading to the effective enhancement of photovoltage.
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Danzhen Li, Danzhen Li, Xianzhi Fu, Xianzhi Fu, } "Advanced photonic sensors of heterojunctions of TiO2/PS/p-Si", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401734; https://doi.org/10.1117/12.401734
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