Advanced photonic sensors of heterojunctions of TiO2/PS/p-Si

Danzhen Li; Xianzhi Fu

doi:10.1117/12.401734

3 October 2000 Advanced photonic sensors of heterojunctions of TiO₂/PS/p-Si

Danzhen Li, Xianzhi Fu

Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401734
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

The photonics sensor with heterojunctions of TiO₂/PS/p-Si was prepared by coating the nano-sized thin film of TiO₂ on surface of the porous silicon substrate and was characterized by the surface photovoltage spectroscopy. The results showed that the photovoltage of porous silicon (PS/p- Si) was greatly increased two to three orders of magnitude by coating TiO₂ thin film. The enhancement of photovoltage may be attributed to the efficient absorption spectrum from near infrared till ultraviolet light of the double heterojunctions of TiO₂/PS/p-Si and the effective separation of the photoproduced electron-hole pairs due to the increment of the built-in electric field of the quasi- intrinsic porous silicon. Moreover, the back electric field generated by the potential difference between PS and p-Si may resist the diffusion of minority carrier toward the electrode, leading to the effective enhancement of photovoltage.

Citation Download Citation

Danzhen Li and Xianzhi Fu "Advanced photonic sensors of heterojunctions of TiO₂/PS/p-Si", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); https://doi.org/10.1117/12.401734

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