Analysis on oscillation wavelength of one-facet antireflection-coated semiconductor lasers

Wei Pan; Hongchang Lu; Bin Luo; Xiao-xia Zhang; Jianguo Chen

doi:10.1117/12.401722

3 October 2000 Analysis on oscillation wavelength of one-facet antireflection-coated semiconductor lasers

Wei Pan, Hongchang Lu, Bin Luo, Xiao-xia Zhang, Jianguo Chen

Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401722
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

Wavelength dependence and finite band width of reflectivity at the AR-coated facet have been taken into account to study the oscillation wavelength and threshold carrier density of one- fact antireflection semiconductor lasers. Analytic expressions for both the upper bound of the threshold carrier density and oscillation wavelength have been derived. Analysis shows the deviation between the wavelength of the AR-coated facet minimum reflectivity an that of the gain peak is a key parameter to reduce the Fabry-Perot oscillations.

Citation Download Citation

Wei Pan, Hongchang Lu, Bin Luo, Xiao-xia Zhang, and Jianguo Chen "Analysis on oscillation wavelength of one-facet antireflection-coated semiconductor lasers", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); https://doi.org/10.1117/12.401722

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