3 October 2000 Analysis on oscillation wavelength of one-facet antireflection-coated semiconductor lasers
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Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401722
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China
Abstract
Wavelength dependence and finite band width of reflectivity at the AR-coated facet have been taken into account to study the oscillation wavelength and threshold carrier density of one- fact antireflection semiconductor lasers. Analytic expressions for both the upper bound of the threshold carrier density and oscillation wavelength have been derived. Analysis shows the deviation between the wavelength of the AR-coated facet minimum reflectivity an that of the gain peak is a key parameter to reduce the Fabry-Perot oscillations.
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Wei Pan, Wei Pan, Hongchang Lu, Hongchang Lu, Bin Luo, Bin Luo, Xiao-xia Zhang, Xiao-xia Zhang, Jianguo Chen, Jianguo Chen, } "Analysis on oscillation wavelength of one-facet antireflection-coated semiconductor lasers", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401722; https://doi.org/10.1117/12.401722
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