3 October 2000 Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films
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Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401683
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China
Abstract
We have investigated the triboluminescence (TrL) intensities of as-grown and thermally annealed ZnS thin films doped with manganese on quartz substrates. The ZnS:Mn thin films were deposited by rf magnetron sputtering and thermally annealed in a reducing gas (5% H2/Ar) at 500 degrees Celsius, 600 degrees Celsius, 700 degrees Celsius and 800 degrees Celsius. The crystallinity and the triboluminescence intensities of the films were greatly enhanced by postannealing up to 700 degrees Celsius, accompanied by an increase in the adherent strength of the film. An X-ray diffractometer and a Scratch Adhesion Tester were used to study the crystallinity and adhesion of the as-grown and annealed films respectively. Results based on crystallographic and acoustic emission data were used to explain the failure mechanisms in the films during the triboluminescence measurement.
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Boateng Onwoma-Agyemann, Boateng Onwoma-Agyemann, Chao-Nan Xu, Chao-Nan Xu, I. Usui, I. Usui, Xu-Guang Zheng, Xu-Guang Zheng, Morio Suzuki, Morio Suzuki, } "Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401683; https://doi.org/10.1117/12.401683
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