Photoluminescence spectrum measurement of GaAs photocathode material

Hui Guo; Vitaly Pravdivtsev

doi:10.1117/12.401782

5 October 2000 Photoluminescence spectrum measurement of GaAs photocathode material

Hui Guo, Vitaly Pravdivtsev

Proceedings Volume 4223, Instruments for Optics and Optoelectronic Inspection and Control; (2000) https://doi.org/10.1117/12.401782
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

The luminescence generation mechanism of semiconductor epitaxial structure and the basic principle of photoluminescence spectrum measuring instrument are outlined in this paper. Detailed method about how to make use of the instrument to measure the doping level and composition as well as the uniformity of GaAs/GaAlAs layer is described. In the end, the effect of these parameters on the function of the III-gen photocathode is discussed.

Citation Download Citation

Hui Guo and Vitaly Pravdivtsev "Photoluminescence spectrum measurement of GaAs photocathode material", Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); https://doi.org/10.1117/12.401782

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