Translator Disclaimer
Paper
9 October 2000 Low extinction ration and half-wave voltage BOA of GaAs: analysis and design
Author Affiliations +
Proceedings Volume 4225, Optical Interconnects for Telecommunication and Data Communications; (2000) https://doi.org/10.1117/12.402719
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China
Abstract
Improved approach to BOA device of low extinction ration and half-wave voltage has been proposed. The relations between extinction ration, half-wave voltage and electrode have been discussed detailedly with transfer matrix methods. The following conclusions has been made: the electrode width can be optimized to get the lowest half-wave voltage; To gain low extinction ration less than -40 dB, the offset of electrode position should be less than 0.3 micron. A BOA device with the extinction ration less than -40 dB can be fabricated by a technics named Self-adjustable Technics.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xutao Huang, Xiaoqing Jiang, Jianyi Yang, and Minghua Wang "Low extinction ration and half-wave voltage BOA of GaAs: analysis and design", Proc. SPIE 4225, Optical Interconnects for Telecommunication and Data Communications, (9 October 2000); https://doi.org/10.1117/12.402719
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top