9 October 2000 Model of dislocations at the interface of bonded wafers
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Proceedings Volume 4225, Optical Interconnects for Telecommunication and Data Communications; (2000) https://doi.org/10.1117/12.402686
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China
Abstract
Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weihua Han, Jinzhong Yu, Liangchen Wang, Hongzhen Wei, Xiaofeng Zhang, Qiming Wang, "Model of dislocations at the interface of bonded wafers", Proc. SPIE 4225, Optical Interconnects for Telecommunication and Data Communications, (9 October 2000); doi: 10.1117/12.402686; https://doi.org/10.1117/12.402686
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