9 October 2000 Si-based resonant-cavity-enhanced photodetector
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Proceedings Volume 4225, Optical Interconnects for Telecommunication and Data Communications; (2000) https://doi.org/10.1117/12.402679
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China
Abstract
Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom- illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, and a full-width at half maximum of 25 nm for the top-illumination RCE photodetector, and 19 mA/W at 1305 nm, and a full-width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305 nm with a reverse bias of 25 V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top- illumination one.
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Qiming Wang, Qiming Wang, Cheng Li, Cheng Li, Buwen Cheng, Buwen Cheng, Qingqing Yang, Qingqing Yang, "Si-based resonant-cavity-enhanced photodetector", Proc. SPIE 4225, Optical Interconnects for Telecommunication and Data Communications, (9 October 2000); doi: 10.1117/12.402679; https://doi.org/10.1117/12.402679
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