20 October 2000 Investigation of process latitude in e-beam lithography for positive CAR UVIII using novel volumetric linewidth measurement
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Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404847
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
An application of a simple and low-cost novel volumetric linewidth measurement technique to e-beam lithography process optimization for the positive CAR UVIII demonstrates clearly its efficiency and accuracy. It helps to optimize exposure, PEB and development procedure to get the highest possible process latitude. For this optimized procedure structure linewidth does not exceed 10% for a 20% exposure variation. PEB temperature and time deviation for 1 degree(s)C and 1 second lead to a 0.5 nm and a 2.5 nm linewidth run-out correspondingly.
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Vladimir A. Kudryashov, Vladimir A. Kudryashov, Philip D. Prewett, Philip D. Prewett, Alan G. Michette, Alan G. Michette, "Investigation of process latitude in e-beam lithography for positive CAR UVIII using novel volumetric linewidth measurement", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404847; https://doi.org/10.1117/12.404847
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