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20 October 2000 Ion projection lithography: November 2000 status and sub-70-nm prospects
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Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404858
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Among all next generation lithography (NGL) options Ion Projection Lithography (IPL) offers the smallest (particle) wavelength of 5x10- 5nm (l00keV Helium ions). Thus, 4x reduction ion-optics has diffraction limits <3nm even when using a numerical aperture as low as NAequals10-5. As part of the European MEDEA IPL project headed by Infineon Technologies wide field ion-optics have been designed by IMS- Vienna with predicted resolution of 50nm within a 12.5mm exposure field. The ion-optics part of the PDT tool (PDT-IOS) has been realized and assembled. In parallel to the PDT-IOS effort, at Leica Jena a test bench for a vertical vacuum 300mm-wafer stage has been realized. Operation of magnetic bearing supported stage movement has already been demonstrated. As ASML vacuum compatible optical wafer alignment system, with 3nm(3(sigma) ) precision demonstrated in air, has been integrated to this wafer test bench system recently. Parallel to the IPL tool development, Infineon Technologies Mask House and the Institute for Microelectronics Stuttgart are intensively working on the development of IPL stencil masks with success in producing 150mm and 200mm stencil masks as reported elsewhere. This paper is focused on information about the status of the PDT-IOS tool.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rainer Kaesmaier, Andreas Wolter, Hans Loeschner, and Stefan Schunck "Ion projection lithography: November 2000 status and sub-70-nm prospects", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); https://doi.org/10.1117/12.404858
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