Low-voltage e-beam irradiation: a new tool for microlithography technology

Vladimir A. Kudryashov

doi:10.1117/12.404859

20 October 2000 Low-voltage e-beam irradiation: a new tool for microlithography technology

Vladimir A. Kudryashov

Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404859
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

The recent achievements in microfabrication technologies based on low- energy electron irradiation of resist are discussed. It has been shown that the lateral resolution of the low-voltage lithography technique is determined mostly by the electrons scattering in the resist, and is approximately equal to the beam penetration depth. Special technology of self-supporting structures formation in the upper resist layer based on low-energy e-beam exposure has been suggested as a way to reduce the radiation damage of the substrate material to zero. Such self-supporting structures could represent an easy production method for self-aligned nano-structures. Effective technologies of the photoresist structures profile control, and suppression of airborne contamination effects in positive CARs (based on the resist shower irradiation with low-energy electrons) are discussed. Submicron structure self-formation technique based on positive resist structures irradiation with low-voltage electrons is demonstrated.

Citation Download Citation

Vladimir A. Kudryashov "Low-voltage e-beam irradiation: a new tool for microlithography technology", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); https://doi.org/10.1117/12.404859

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KEYWORDS

Photoresist materials

Contamination

Lithography

Photoresist processing

Electron beam lithography

Ultraviolet radiation

Electron beams

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