20 October 2000 Low-voltage e-beam irradiation: a new tool for microlithography technology
Author Affiliations +
Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404859
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
The recent achievements in microfabrication technologies based on low- energy electron irradiation of resist are discussed. It has been shown that the lateral resolution of the low-voltage lithography technique is determined mostly by the electrons scattering in the resist, and is approximately equal to the beam penetration depth. Special technology of self-supporting structures formation in the upper resist layer based on low-energy e-beam exposure has been suggested as a way to reduce the radiation damage of the substrate material to zero. Such self-supporting structures could represent an easy production method for self-aligned nano-structures. Effective technologies of the photoresist structures profile control, and suppression of airborne contamination effects in positive CARs (based on the resist shower irradiation with low-energy electrons) are discussed. Submicron structure self-formation technique based on positive resist structures irradiation with low-voltage electrons is demonstrated.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Kudryashov, "Low-voltage e-beam irradiation: a new tool for microlithography technology", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404859; https://doi.org/10.1117/12.404859
PROCEEDINGS
10 PAGES


SHARE
Back to Top