20 October 2000 Measurement and analysis of reticle and wafer level contributions to total CD variation
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Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404840
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
The impact of reticle critical dimension (CD) variations on wafer level CD performance has been growing with the trend towards sub-wavelength lithography. Reticle manufacturing, CD specifications and qualification procedures must now take into account the details of the wafer fab exposure and process conditions as well as the mask process. The entire pattern transfer procedure, from design to reticle to wafer to electrical results, must be viewed as a system engineering problem. In this paper we show how hardware and software tools, procedures, and analysis techniques are being developed to support the demanding requirements of the pattern transfer process in the era of 0.13 micron lithography.
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Moshe E. Preil, Moshe E. Preil, Chris A. Mack, Chris A. Mack, "Measurement and analysis of reticle and wafer level contributions to total CD variation", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404840; https://doi.org/10.1117/12.404840
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