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24 October 2000 Effect of deposition conditions on the properties of HDP-CVD-fluorinated silicon oxide (SiOF)
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Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405376
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Fluorinated silicon oxide (SiOF) has been deposited by the high density plasma chemical vapor deposition technique using a SiH4/SiF4/O2/Ar plasma. The effect of the SiF4:O2 flow rate ratio together with the substrate rf bias and the source rf bias were investigated systematically. By varying the SiF4 flow rate ratio together with the substrate rf bias and the source rf bias were investigated systematically. By varying the SiF4 flow rate, the concentration of fluorine in the SiOF can range from approximately 5 at percent to approximately 12 at percent. At low SiF4:O2 flow ratios, the fluorine incorporates primarily as -Si-F in the oxide to changes in the SiOF microstructure, which result in modifications to the properties of this low-k material. An increased substrate rf bias did not affect the density of the oxide. However, the among of incorporated fluorine and the net deposition rate are both reduced. The source rf has no effect on the density of the oxide and the amount of incorporated fluorine. The main effect is a slight increase in the deposition rate.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young Way Teh, Terence Kin Shun Wong, John L. Sudijono, and Alex K. See "Effect of deposition conditions on the properties of HDP-CVD-fluorinated silicon oxide (SiOF)", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405376
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