24 October 2000 Impact of boron penetration on gate oxide reliability and device performance in a dual-gate oxide process
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Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405378
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
The effect of boron penetration on device performance and gate oxide reliability of P+ polysilicon gate MOSFET of a dual oxide process with salicide block module was investigated. To get stable non-salicided poly sheet resistance, a capping oxide is required before source/drain RTA anneal. It is found that the transistor performance and gate oxide reliability were degraded with the capping oxide. The optimization scheme by replacing BF2 with Boron for P+ implant is demonstrated.
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Yunqiang Zhang, Yunqiang Zhang, Chock Hing Gan, Chock Hing Gan, Xi Li, Xi Li, James Lee, James Lee, David Vigar, David Vigar, Ravi Sundaresan, Ravi Sundaresan, } "Impact of boron penetration on gate oxide reliability and device performance in a dual-gate oxide process", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405378; https://doi.org/10.1117/12.405378
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