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24 October 2000 Implanted boron distribution in p+n structures using scanning capacitance microscopy
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Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405388
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Most of the past work on dopant profiling using scanning capacitance microscopy (SCM) deals mainly with either p+/p or n+/n samples. The presence of a pn junction poses an additional consideration to the use of SCM in the quantitative interpretation of dopant profiles. In this paper, the SCM technique was used to measure the 2D boron dopant profile from cross sections of a high-energy boron-implanted pn junction and a laser annealed ultra- shallow p+-n junction.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. L. Teo, Kin Leong Pey, Wai Kin Chim, and Yung Fu Chong "Implanted boron distribution in p+n structures using scanning capacitance microscopy", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405388
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