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24 October 2000 InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam epitaxy
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Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405397
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
This paper describes the fabrication and characterization of the InP/InAs/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy (SSMBE). An improvement in current gain and microwave noise has been observed for the SSMBE-grown InP/InGaAs DHBTs. The HBT with a 50 nm, 2 X 19 cm-3 Be-doped base exhibits dc current gain as high as 350, which is about two times of that measured on the referenced devices grown by gas-source molecular beam epitaxy. The HBT with 5 X 5 micrometers 2 emitter shows a minimum noise figure of 1.04 dB and associated gain of 16 dB measured at 2 GHz with Ic equals 1 mA. In comparison, the HBT grown by GSMBE gives an Fmin of 1.9 dB under same measurement condition. A slight increase in fT and fmax for the SSMBE-grown HBT has also been observed. The drastic increase of current gain for the SSMBE-grown HBT could be explained by reducing base recombination due to the ful elimination of hydrogen contamination during the material growth.
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Hong Wang, Geok Ing Ng, Hai Qun Zheng, Kaladhar Radhakrishnan, Soon Fatt Yoon, Yongzhong Xiong, Lye Heng Chua, Hongru Yang, Subrata Halder, and Chee Leong Tan "InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam epitaxy", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405397
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