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24 October 2000 Plasma removal of post-RIE residues for dual-damascence processing
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Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405391
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
The objective of this research was to develop a process of photoresist and polymer plasma stripping after reactive ion etching of vias and trenches in dual damascene technology. The development was implemented at Mattson low-temperature ICPsm chamber. Based on the results of designed experiment in gas mixture of O2/CF4/(N2 + 4 percent H2), the process window was established which provided clean post-strip surface with minimum dielectrics loss without using additional wet strippers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir N. Bliznetsov and Woo-Min Jo "Plasma removal of post-RIE residues for dual-damascence processing", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405391
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