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24 October 2000 Self-organized growth of InP on GaAs substrate by MOCVD
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Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405393
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Self-organized InP quantum dots having a staggered band lineup are formed in a GaAs matrix by MOCVD. Experimental results of photoluminescence show that the growth behaviors are different when the growth is carried out a different temperatures. Thicker and more smooth wetting layer are evident if the InP is grown at 600 degrees C. For the samples of InP grown at 490 degrees C, besides a weak PL peak resulting from the wetting layer, a strong PL peak located at 986 nm is observed. The luminescence can be attributed to radiative recombination of 0D electrons located in the InP dots and holes located in the surrounding regions. State filling of the 0D electrons is also observed for the type-II quantum dots.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benzhong Wang and Soo-Jin Chua "Self-organized growth of InP on GaAs substrate by MOCVD", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405393
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