24 October 2000 Spreading resistance profiling of ultrashallow junction NPN BJT with carrier redistribution effect
Author Affiliations +
Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405373
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
The spreading resistance profiling technique, when applied to ultra shallow junctions, requires the solution of the Poisson's equation in order to correctly account for the carrier redistribution effect. Whereas it is a straightforward procedure to calculate the spreading resistance profile if the dopant profile is given, it is mathematically complex and tedious to recover the dopant profile for an ultra shallow junction profile. The difficulty lies in recovering the correct type of donor or acceptor species and the metallurgical junctions in the right location. It is known that the carrier redistribution effect displaces the on-bevel junctions away from the metallurgical junctions. To put right this difficulty, the FORWARD and SRTOD algorithms are briefly explained in this paper and the results of FORWARD and SRTOD for an NPN BJT are shown. The improved SRTOD algorithm can correct the dopant profile of the double ultra shallow metallurgical junctions from the spreading resistance profile, taking into account the carrier redistribution effect.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louison Cheng Peng Tan, Leng Seow Tan, Mook Seng Leong, "Spreading resistance profiling of ultrashallow junction NPN BJT with carrier redistribution effect", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405373; https://doi.org/10.1117/12.405373
PROCEEDINGS
11 PAGES


SHARE
Back to Top