Use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusion

Rong Liu; Andrew Thye Shen Wee; L. Liu; G. Hao

doi:10.1117/12.405375

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24 October 2000 Use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusion

Rong Liu; Andrew Thye Shen Wee; L. Liu; G. Hao

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Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405375
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

Copper has attracted attention as a new interconnection material for metalization because of its lower bulk resistivity and higher resistance to electro migration than Al and its alloys. However, Cu diffusion into Si and SiO₂ during annealing degrades the reliability of VLSL devices. A barrier layer is therefore important in realizing Cu interconnection technology. Tantalum (Ta) thin films are very stable barrier film against Cu diffusion. The sensitivity and depth resolution of the SIMS technique make it an attractive tool for monitoring Cu diffusion. In this study, Cu/Ta/SiO2/Si samples were heat treated at 400 degrees C-850 degrees C, and analyzed by a Cameca IMS 6f SIMS instrument with oxygen beam under various conditions. Specially, the use of a rotating stage on SIMS provides significant improvement in depth resolution for polycrystalline metal film samples.

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Rong Liu, Andrew Thye Shen Wee, L. Liu, and G. Hao "Use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusion", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405375

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