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24 October 2000 Analytical model for subthreshold current in short-channel fully depleted SOI MOSFETs incorporating velocity overshoot
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Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405422
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Silicon-on-Insulator (SOI) structures are of great interest for future large scale integrated circuits (LSIs) because parasitic capacitances in devices are reduced. The reduced device capacitances in SOI devices promise a higher speed circuit operation and lower power consumption than the devices fabricate on bulk SI wafers. AN accurate model for the subthreshold current in MOSFET is very important for design of the high speed-low power transistors and circuits for the assessment of the fully depleted SOI technology in comparison to the conventional bulk technology. A new 2D model for subthreshold current in fully depleted silicon-on- insulator metal oxide semi-conductor field effect transistor is developed. The model is based on a 'free inversion areal charge density Qm, solution of 1D effective gate channel equation and a quasi-2D Poisson's equation in weak inversion considering a modified expression for effective channel velocity and phenomenon of velocity overshoot. The mole provides a convenient tool for the design of submicron SOI MOSFETs.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. H. M. Zahirul Alam, Mohammad Faizul Momen, Md. S. Islam, and Pran Kanai Saha "Analytical model for subthreshold current in short-channel fully depleted SOI MOSFETs incorporating velocity overshoot", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405422
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