Characterization and modeling of avalanche multiplication in HBTs

Fujiang Lin; Bo Chen; Tianshu Zhou; Ban Leong Ooi; Pang Shyan Kooi

doi:10.1117/12.405408

24 October 2000 Characterization and modeling of avalanche multiplication in HBTs

Fujiang Lin, Bo Chen, Tianshu Zhou, Ban Leong Ooi, Pang Shyan Kooi

Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405408
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

An accurate modeling of avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high injections.

Citation Download Citation

Fujiang Lin, Bo Chen, Tianshu Zhou, Ban Leong Ooi, and Pang Shyan Kooi "Characterization and modeling of avalanche multiplication in HBTs", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405408

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