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24 October 2000 Correlation between distributed and lumped FET model parameters
Subrata Halder, Geok Ing Ng, Choi Look Law
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Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405406
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
For long gate-width FET devices, distributed model provides better accuracy. However the extraction of model parameters are difficult as they are expressed in unit gate width which may be different from the device under investigation. In this paper a technique is proposed for defining these model parameters by linking them with lumped element equivalent circuits through simple relations. A good correlation between the lumped and the distributed models are observed for a 2 by 300 micrometers pHEMT device. The method provides initial values of the distributed model, which may further be optimized for perfect fit over wider frequency range.
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Subrata Halder, Geok Ing Ng, and Choi Look Law "Correlation between distributed and lumped FET model parameters", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405406
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KEYWORDS
Field effect transistors
Instrument modeling
Cerium
Fermium
Frequency modulation
Microelectronics
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