Diffusion current and thermal noise in short-channel MOSFETs

Michael S. Obrecht; Tajinder Manku

doi:10.1117/12.405417

24 October 2000 Diffusion current and thermal noise in short-channel MOSFETs

Michael S. Obrecht, Tajinder Manku

Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405417
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

RF noise in short channel MOSFETs is discussed from the point of view of diffusion and drift current components. It is demonstrated that the access noise is due to a growing contribution of the diffusion current in a short channel device.

Citation Download Citation

Michael S. Obrecht and Tajinder Manku "Diffusion current and thermal noise in short-channel MOSFETs", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405417

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