24 October 2000 Diffusion current and thermal noise in short-channel MOSFETs
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Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405417
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
RF noise in short channel MOSFETs is discussed from the point of view of diffusion and drift current components. It is demonstrated that the access noise is due to a growing contribution of the diffusion current in a short channel device.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael S. Obrecht, Michael S. Obrecht, Tajinder Manku, Tajinder Manku, } "Diffusion current and thermal noise in short-channel MOSFETs", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405417; https://doi.org/10.1117/12.405417
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