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24 October 2000 Investigation of reverse short-channel effect with numerical and compact models
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Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405435
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
In this paper, a physically based reverse short channel effect (RSCE) threshold voltage compact model is investigated and compared with numerical simulation. A new method to predict RSCE using the compact model is given, which is supported by the TCAD data. A wide range of Vth predictions of nchannel MOSFETs with pile-up structures is conducted. Good prediction results are achieved between the RSCE compact model and TCAD data. The results further support the physics-based RSCE mode, which is useful for both circuit simulation and technology development as well as device design.
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Yuwen Wang, Khee Yong Lim, Wensheng Qian, and Xing Zhou "Investigation of reverse short-channel effect with numerical and compact models", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405435
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