24 October 2000 Steep retrograde indium channel profiling for high-performance nMOSFETs device fabrication
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Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405423
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile for effective Short Channel Effects and Reverse Short Channel Effects control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant. Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shiang Yang Ong, Eng Fong Chor, Ying Keung Leung, James Lee, Wen Shen Li, Alex K. See, and Lap Hung Chan "Steep retrograde indium channel profiling for high-performance nMOSFETs device fabrication", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405423; https://doi.org/10.1117/12.405423
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