CVD Cu/IMP Cu/TaN/SiO2/Si structures

Seow Wee Loh; Dao Hua Zhang; Chao Yong Li; Rong Liu; Andrew Thye Shen Wee

doi:10.1117/12.404876

23 October 2000 CVD Cu/IMP Cu/TaN/SiO2/Si structures

Seow Wee Loh, Dao Hua Zhang, Chao Yong Li, Rong Liu, Andrew Thye Shen Wee

Proceedings Volume 4229, Microelectronic Yield, Reliability, and Advanced Packaging; (2000) https://doi.org/10.1117/12.404876
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

We report the properties of the copper films deposited by metal-organic chemical vapor deposition (MOCVD) and the interaction between the copper film and its neighbor layer in the Cu/TaN/SiO₂/Si structures upon annealing in a furnace in a nitrogen environment. It is found that the sheet resistance of the copper film slightly decreases as the annealing temperature increases up to 500 degrees C and the increases drastically with the further increase of the annealing temperature. From x-ray diffraction, both CuTa₁₀O₂₆ and TaSi₂ can be observed in the MOCVD Cu/TaN/SiO₂/Si structures at an annealing temperature of 600 degrees C, indicating an interact between the Cu film and the layer underneath. For the structures which have a deposited flash Cu layer between the CVD Cu film and TaN barrier, however, the TaSi₂ cannot be observed. SIMS analysis indicates that the addition of the flash Cu layer also impacts Cu diffusion across the barrier metal due likely to the change in the crystallographic plane of the Cu films.

Citation Download Citation

Seow Wee Loh, Dao Hua Zhang, Chao Yong Li, Rong Liu, and Andrew Thye Shen Wee "CVD Cu/IMP Cu/TaN/SiO2/Si structures", Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); https://doi.org/10.1117/12.404876

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