Comprehensive study of indium-implantation-induced damages in 0.25-um MOSFETs

Hong Liao; Louis Lim; Anthony Lowrie; Chock Hing Gan; Mark Redford

doi:10.1117/12.404863

23 October 2000 Comprehensive study of indium-implantation-induced damages in 0.25-um MOSFETs

Hong Liao, Louis Lim, Anthony Lowrie, Chock Hing Gan, Mark Redford

Proceedings Volume 4229, Microelectronic Yield, Reliability, and Advanced Packaging; (2000) https://doi.org/10.1117/12.404863
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

In this paper, an investigation of the DC characteristics of 0.25 micrometers indium-implanted MOSFETs concerning on indium implantation induced damages is presented. The experimental data indicates that the devices with indium-implanted channel tend to show increases in device leakage current, which could be attributed the indium implantation induced damages. The impact of the indium implantation on the degradation of device performance was investigated through detailed studies of device I-V characteristics, and the measurement results are found to correlate well with the variations in the process conditions. Our findings indicate that the elimination of the implantation-induced damages by post implantation annealing is particularly important for deep sub-micron MOSFETs using indium implantation.

Citation Download Citation

Hong Liao, Louis Lim, Anthony Lowrie, Chock Hing Gan, and Mark Redford "Comprehensive study of indium-implantation-induced damages in 0.25-um MOSFETs", Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); https://doi.org/10.1117/12.404863

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