A Solenoid-type Inductors have been realized using electroplating technique mainly used for 2 Ghz band CMOS RF VCO applications. The integrated spiral inductor has low Q factor due to substrate loss and skin effects. And it also occupies large area compared to solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower substrate loss and other interference with integrated passive components. In this research, Solenoid-type inductors are simulated and modeled as equivalent circuit for CMOS RF VCO based on extracted S- parameters. The electroplated solenoid-type inductors are fabricated on both a standard silicon substrate and glass substrate by thick PR photolithography and copper electroplating. The achieved inductance varies range from 1 nH to 5 nH, and maximum Q factor over 10. The inductors are scheduled to be integrated on CMOS RF VCO with RF MEMS capacitor for future.