20 October 2000 Electroplated solenoid-type inductors for CMOS rf CO
Author Affiliations +
Proceedings Volume 4230, Micromachining and Microfabrication; (2000) https://doi.org/10.1117/12.404888
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
A Solenoid-type Inductors have been realized using electroplating technique mainly used for 2 Ghz band CMOS RF VCO applications. The integrated spiral inductor has low Q factor due to substrate loss and skin effects. And it also occupies large area compared to solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower substrate loss and other interference with integrated passive components. In this research, Solenoid-type inductors are simulated and modeled as equivalent circuit for CMOS RF VCO based on extracted S- parameters. The electroplated solenoid-type inductors are fabricated on both a standard silicon substrate and glass substrate by thick PR photolithography and copper electroplating. The achieved inductance varies range from 1 nH to 5 nH, and maximum Q factor over 10. The inductors are scheduled to be integrated on CMOS RF VCO with RF MEMS capacitor for future.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chul Nam, Chul Nam, Wonseo Choi, Wonseo Choi, KukJin Chun, KukJin Chun, } "Electroplated solenoid-type inductors for CMOS rf CO", Proc. SPIE 4230, Micromachining and Microfabrication, (20 October 2000); doi: 10.1117/12.404888; https://doi.org/10.1117/12.404888

Back to Top