20 October 2000 High-aspect-ratio structure formation in x-ray lithography
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Proceedings Volume 4230, Micromachining and Microfabrication; (2000) https://doi.org/10.1117/12.404896
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
The relationship between the resist layer thickness, the masking layer thickness and x-rays wavelength was investigated to optimize submicron structures formation in 10 - 100 micrometer resist layers. It was shown that the optimal wavelength for 50 - 100 micrometer resist layer exposure is 0.4 nm. A specially designed medium-power soft x-ray tube with a water-cooled exchangeable anode was built for experiments in a high aspect ratio structures formation. Experimental investigations were carried out for 0.417 and 1.33 nm wavelength radiation. Test x-ray masks with 0.1 micrometer Si3N4 membrane and a gold absorption layer with 0.2 - 0.7 micrometer thickness were used for high aspect ratio structures formation in ERP-9 and UVIII resists with thickness from 2 to 10 micron. The 3 micrometer thick gold mesh with 15 micrometer pitch was used as a mask for structures formation in 100 micrometer thick SU8 resist layer with 0.417 nm x-rays.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Kudryashov, Vladimir A. Kudryashov, Sing Lee, Sing Lee, "High-aspect-ratio structure formation in x-ray lithography", Proc. SPIE 4230, Micromachining and Microfabrication, (20 October 2000); doi: 10.1117/12.404896; https://doi.org/10.1117/12.404896


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