20 October 2000 High-frequency rf microswitches using MEMS-integrated fabrication process
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Proceedings Volume 4230, Micromachining and Microfabrication; (2000) https://doi.org/10.1117/12.404912
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Both electrical and mechanical models, exemplified with a micromachined capacitive switch with simple bridge structure, accurately describing its electrical and mechanical characteristics are described in this paper. The electrical model is represented as a RLC circuit, while the mechanical model is represented as a fixed-fixed beam. The advantage of these models is that it is possible to pre- determine various characteristics, such as the switching time of micromachinecd capacitive switches, during the design stage. These models can be used to accurately design micromachined capacitive switches for microwave applications. An illustrated fabrication process is also discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ai Qun Liu, Geok Ing Ng, Yee Loy Lam, S. T. Chew, S. K. Ting, "High-frequency rf microswitches using MEMS-integrated fabrication process", Proc. SPIE 4230, Micromachining and Microfabrication, (20 October 2000); doi: 10.1117/12.404912; https://doi.org/10.1117/12.404912
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