6 October 2000 Large-area gratings fabricated by ultrafast e-beam writing
Author Affiliations +
Proceedings Volume 4231, Advanced Optical Manufacturing and Testing Technology 2000; (2000); doi: 10.1117/12.402775
Event: International Topical Symposium on Advanced Optical Manufacturing and Testing Technology, 2000, Chengdu, China
Abstract
To realize a well defined binary grating (for grating originals as well as grating masks), it is helpful to use a rectangular resist profile because of the importance of the fill factor. This can be achieved easier by e-beam writing than by holography. On the opposite, well-known handicaps of e-beam writing are large writing times and grating ghosts (caused e.g. by stitching errors). We fabricated chromium grating masks (period 500 nm, size 100 mm x 100 mm) by an extremely fast and specialized e-beam direct writing process. The typical and critical parameters, like fill factor and wave front, were locally measured in the whole grating area. The paper will show the method of e-beam writing and the results of lateral grating quality. The remaining errors are separated in problems caused by the writing process and in problems related to resist technology and etching process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernst-Bernhard Kley, T. Clausnitzer, Matthias Cumme, Karsten Zoellner, Bernd Schnabel, A. Stich, "Large-area gratings fabricated by ultrafast e-beam writing", Proc. SPIE 4231, Advanced Optical Manufacturing and Testing Technology 2000, (6 October 2000); doi: 10.1117/12.402775; https://doi.org/10.1117/12.402775
PROCEEDINGS
10 PAGES


SHARE
KEYWORDS
Binary data

Diffraction gratings

Error analysis

Wavefronts

Chromium

Photoresist processing

Etching

Back to Top