6 April 2001 Physiochemical characteristics of piezoelectric zinc oxide films grown by single-source chemical vapor deposition
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Abstract
Zinc oxide thin films were deposited onto chromium coated silicon dioxide wafers using Single Source Chemical Vapor Deposition (SS CVD). The physicochemical properties of these films were then characterized using X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The physicochemical profile generated from these measurements was then compared to the piezoelectric properties of the films. The piezoelectric d33 coefficient of the films was determined using Optical Interferometry and Atomic Force Microscopy (AFM). It was found that the AFM measurements gave a d33 piezoelectric constant of 12 +/- 3 pm/V whereas the interferometric measurements yielded a d33 of 0.45 - 1.21 +/- 0.10 pm/V. The difference between these two values highlighted the need to distinguish between Local Piezoelectric Response (LPR) and Global Piezoelectric Response (GPR) and the factors such as crystallinity and sample handling which can affect both. Unlike sputtered films, the results for SS CVD film suggest that the carbon impurities within the film appeared to have an effect in orienting the polarity of the crystallites.
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Everett Lee, Leong Mar, A. J. Hartmann, Robert N. Lamb, "Physiochemical characteristics of piezoelectric zinc oxide films grown by single-source chemical vapor deposition", Proc. SPIE 4234, Smart Materials, (6 April 2001); doi: 10.1117/12.424429; https://doi.org/10.1117/12.424429
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