4 October 2000 Liquid phase epitaxial growth and characterization of Nd:YAG/YAG structures for thin-film lasers
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Abstract
Liquid phase epitaxy (LPE) is a suitable technique to produce diode laser-pumped solid state lasers with a planar waveguide structure. The thin films of Nd3+, Ga3+ and Lu3+ doped YAG have been grown form a supercooled molten garnet-flux high temperature solution on undoped YAG substrates by the standard LPE dipping technique. The emission spectra and fluorescence lifetimes have been measured for Nd:YAG layers with different concentration of Nd3+ ions. Additionally, the films were investigated versus concentration of neodymium, gallium and lutetium using ESR, x-ray diffraction and micro interferometric techniques. According to above measurements it can be concluded that the obtained epitaxial structures are of good quality.
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Jerzy Sarnecki, Jerzy Sarnecki, Michal Malinowski, Michal Malinowski, Jerzy Skwarcz, Jerzy Skwarcz, Ryszard Jablonski, Ryszard Jablonski, Krystyna Mazur, Krystyna Mazur, Dariusz Litwin, Dariusz Litwin, Jerzy Sass, Jerzy Sass, } "Liquid phase epitaxial growth and characterization of Nd:YAG/YAG structures for thin-film lasers", Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); doi: 10.1117/12.402860; https://doi.org/10.1117/12.402860
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