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4 October 2000 SIMS study of atom migration in GaAs/AlGaAs quantum well laser structures
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Abstract
SIMS depth profiles of Al, Ga and Be were investigated in the GaAs/AlGaAs GRIN SCH SQW laser diode structures grown by MBE at various substrate temperature. Additionally, SIMS distribution of Si and O in MMQW laser structures grown at constant temperature with the active region doped with Si and undoped intentionally are also shown. Because the diffusion coefficient of Be is significantly larger than that of Si an effect of the p-n junction displacement towards the n-AlGaAs cladding layer is observed in structures with undoped active region and grown in high temperature. Our results confirmed results obtained by other authors which indicate that the movement of Be atoms is stopped when the active region is doped with Si. Simultaneously, it was also observed that amount of O accumulated at the GaAs/AlGaAs heterointerface was reduced. It was discussed that decreasing the amount of O together with the control of the Si doping profile are of the significant importance from the point of view of laser performance.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maria Kaniewska, A. Barcz, D. Krynska, and M. Wesolowski "SIMS study of atom migration in GaAs/AlGaAs quantum well laser structures", Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); https://doi.org/10.1117/12.402863
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