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2 November 2000 Laser wire bonding in power transistors
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Abstract
Attempts at increasing the reliability of assembly of power transistors the authors have proposed a new method for thick wire bonding. Bonding produced in this technology has the form of weld made by the pulsed laser beam. The results of some investigations into the proposed method are presented. The results of studies on semiconductor test structures bring the hope for the positive solution to the problem of increasing the reliability of assembly of such structures.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franciszek Kostrubiec and Ryszard Pawlak "Laser wire bonding in power transistors", Proc. SPIE 4238, Laser Technology VI: Applications, (2 November 2000); https://doi.org/10.1117/12.405978
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