2 November 2000 Modification of the optical and electronics parameters in a-Si:H as a result of annealing with CO2 laser radiation
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Abstract
Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO2 laser radiation ((lambda) equals10,6 micrometers ). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO2 laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO2 laser irradiation on the energetic distribution of electron states of a a-Si:H is reported.
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A. Grabowski, Marian Nowak, "Modification of the optical and electronics parameters in a-Si:H as a result of annealing with CO2 laser radiation", Proc. SPIE 4238, Laser Technology VI: Applications, (2 November 2000); doi: 10.1117/12.405973; https://doi.org/10.1117/12.405973
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