9 May 2001 Direct write exposure and ablation of photoresist in fine scale interconnect circuits
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Proceedings Volume 4243, Saratov Fall Meeting 2000: Laser Physics and Photonics; and Spectroscopy and Molecular Modeling; (2001); doi: 10.1117/12.426675
Event: Saratov Fall Meeting 2000, 2001, Saratov, Russian Federation
Abstract
Interconnect to high density electronic components is an increasingly important problem in electronics production. While most commercial circuit boards and flex circuits are limited to interconnect spacing in the range of 100 microns, standard photo imaging methods can be pushed down to the range of 50 microns, although typically with significantly reduced yields; further increases in interconnect densities requires the use of more exotic methods. Here we discuss two such methods, direct write exposure of photo-resist using a low power UV laser to produce a positive image of the interconnect pattern, and the closely related, somewhat higher power UV laser ablation of photo-resist to produce a negative image of the circuit. These methods currently offer reduced trace size, increased flexibility in trace placement, and up to a factor of two reduction in interconnect spacing with excellent yields; further improvements in trace density are anticipated with improved laser optics and non-Gaussian beam shaping techniques.
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William A. Beck, Jeff Strole, John Yarno, Thayer Hughes, Ben Ross, "Direct write exposure and ablation of photoresist in fine scale interconnect circuits", Proc. SPIE 4243, Saratov Fall Meeting 2000: Laser Physics and Photonics; and Spectroscopy and Molecular Modeling, (9 May 2001); doi: 10.1117/12.426675; http://dx.doi.org/10.1117/12.426675
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KEYWORDS
Laser ablation

Etching

Plating

Plasma etching

Pulsed laser operation

Wet etching

Laser drilling

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