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1 May 2001 Growth and characterization of Tm,Ho-doped LuLiF4 and YLiF4 crystals
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Abstract
Several Tm,Ho-doped LuLF and YLF crystals were grown using the Czochralski method. Crystals were pulled in a furnace with atmospheric control system. Pulling and rotation rates were 1 mm/hr and 15 rpm, respectively. High purity (>= 99.99%) fluorides were used as starting materials. High vacuum (approximately equals 10-5 torr) prior to the growth and CF4 gas during the growth were applied. Single crystals of up to 20 mm in diameter and 80 mm in length were successfully grown. Various laser rods of sizes 4 X 3 X 2.7 mm3 were prepared from the grown crystal boules. The crystal ends were Brewster- cut to minimize the reflection losses inside the cavity. Two quasi-CW LD-arrays of 6 X 60 W each side-pump the crystals. The pump beam is focused using two lens ducts of length 64 mm to a waist of 2.5 X 2.5 mm2. The nearly hemispherical laser cavity is formed by a flat high reflector and a 300 mm radius of curvature 5% transmission output coupler. At room temperature, up to 13.5 mJ (9.9 mJ) with a slope efficiency of 10.5% (7.5%) has been demonstrated at 1 Hz for 5% Tm, 0.5% Ho:LuLF (5% Tm, 0.5% Ho:YLF).
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vikas Sudesh, Kazuhiro Asai, Akihito Kudou, Kazushige Ito, Kiyoshi Shimamura, and Tsuguo Fukuda "Growth and characterization of Tm,Ho-doped LuLiF4 and YLiF4 crystals", Proc. SPIE 4268, Growth, Fabrication, Devices, and Applications of Laser and Nonlinear Materials, (1 May 2001); https://doi.org/10.1117/12.424638
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