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29 June 2001 GaN etching by simultaneous irradiation of KrF excimer laser and F2 laser
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Abstract
Etching of GaN by ablation using KrF excimer or F2 laser has been demonstrated, as well as simultaneous irradiation of F2 laser with KrF excimer laser to GaN has been explored. The GaN etching process is consisted of the following sequential procedures: laser ablation and an acid chemical treatment for residue removal. Single-pulse irradiation of KrF excimer laser as well as F2 laser planarizes the etched GaN surface. Multiple KrF irradiation roughens etched GaN surface significantly; however, low intensity F2 laser simultaneously irradiated with the KrF excimer laser improves the surface roughness. Complete removal of 700 nm-GaN is accomplished by 10 pulses with a laser intensity of approximately 40 x 106 W/cm2, besides, very sharp etching sidewall and extremely flat sapphire surface are obtained.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshimitsu Akane, Koji Sugioka, Kotaro Obata, Shintaro Nomura, Kiyotaka Hammura, Naoko Aoki, Koichi Toyoda, Yoshinobu Aoyagi, and Katsumi Midorikawa "GaN etching by simultaneous irradiation of KrF excimer laser and F2 laser", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); https://doi.org/10.1117/12.432505
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