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29 June 2001 Laser-assisted fabrication of electronic circuits using the ADDIMID process
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A novel laser-assisted technology for the additive fabrication of microelectronic circuits on three-dimensional polymer substrates (Molded Interconnect Devices, 3-D MID) has been developed. Advantages of the ADDIMID-approach are: a very short process chain, no etchants, no coatings (important on 3D substrates), industry-proven laser technology (diode-pumped Nd:YAG) and high writing velocity (greater than 600 mm/s). An essential component of the process is a special composite substrate material. The material consists of a polymer matrix containing finely dispersed microcapsules. The microcapsules are fabricated by coating micron-scaled copper powder with nano-scaled SiO2. The SiO2 coating provides electrical insulation of the copper particles and promotes adhesion to the polymer matrix. The microcapsules are mixed with a thermoplastic base material to form a granulate. Polymer substrates are produced by injection-molding. A laser direct-write process with galvanometric beam deflection is used to generate the circuit pattern. The laser uncovers the microcapsules and removes the SiO2 coating. Metallic copper is exposed in the processed surface regions. The exposed copper acts as catalytic nucleation site. The circuitry is then formed by chemical copper-plating. This paper presents experimental investigations on direct writing with a CO2- and a diode-pumped Nd:YAG-laser. Effects of variations in focus position, writing velocity, and pulse frequency are described and specified with regard to their impact on the quality of the circuit patterns. A phenomenological model of the laser direct-write process is outlined.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerd Esser, Bernd Jahrsdoerfer, and Uwe Urmoneit "Laser-assisted fabrication of electronic circuits using the ADDIMID process", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001);


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