Microscale bending using pulsed and cw laser

X. Richard Zhang; Xianfan Xu; Andrew C. Tam

doi:10.1117/12.432552

29 June 2001 Microscale bending using pulsed and cw laser

X. Richard Zhang; Xianfan Xu; Andrew C. Tam;

Author Affiliations +

Proceedings Volume 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI; (2001) https://doi.org/10.1117/12.432552
Event: Photonics West 2001 - LASE, 2001, San Jose, CA, United States

Abstract

The purpose of this work is to investigate microscale laser bending and to compare the results of bending using a pulsed and a CW laser. Samples of ceramics (Al₂O₃/TiC), silicon, and stainless steel are bent at various laser processing conditions. Changes of surface composition after laser irradiation are analyzed using an electron probe microanalyzer (EPMA). Comparisons of CW vs. pulsed bending are made in terms of the amount of bending and the damage to the specimens.

Citation Download Citation

X. Richard Zhang, Xianfan Xu, Andrew C. Tam, "Microscale bending using pulsed and cw laser", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432552; https://doi.org/10.1117/12.432552

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