29 June 2001 Microscale bending using pulsed and cw laser
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Abstract
The purpose of this work is to investigate microscale laser bending and to compare the results of bending using a pulsed and a CW laser. Samples of ceramics (Al2O3/TiC), silicon, and stainless steel are bent at various laser processing conditions. Changes of surface composition after laser irradiation are analyzed using an electron probe microanalyzer (EPMA). Comparisons of CW vs. pulsed bending are made in terms of the amount of bending and the damage to the specimens.
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X. Richard Zhang, Xianfan Xu, Andrew C. Tam, "Microscale bending using pulsed and cw laser", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432552; https://doi.org/10.1117/12.432552
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