The usage of laser treatments for production of semiconductor elements becomes necessary in order of it is great advantages. The traditional methods for preparation of photosensitive layers from A2B6 compounds are vacuum evaporation, cathode or magnetron sputtering with additional thermal treatment and usage same techniques for contact areas formation of In, Ga, Al, Cd, CdO. The creation of Om- power points for solar elements, using CdS an n-layer, continues to be a problem because of the necessity of transparency and linear characteristics. In this paper is offered a method for preparation of solar cells deposited by vacuum evaporated on cital substrate with additional laser treatment by CW CO2 laser and in situ formation of Om- power points from CdO over a layer of CdS using UV TEA N2 laser. The electronic and compositional properties of solar cells were analyzed by XRD, XPS, and SEM. Using vacuum evaporation of CdS on cital substrate and laser treatments of layers in powder of CdS, CdCl2 and CuCl, the photosensitivity of CdS layers has been improved by 8 orders of magnitude, which makes them suitable for solar cells and photoresistors with planar Om contact areas from CdO with very high transparency - about 80% while it is about 1% for the metal power points.