29 June 2001 Structuring silicon with femtosecond lasers
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Abstract
In this paper, basic examinations on the laser cutting of silicon using ultrashort ((tau) H equals 150 fs) laser pulses are presented. The influence of the polarization on the cutting process is investigated. It was found that significant deviations from the ideal cut geometry occur if the polarization is parallel to the cutting motion. An innovative automated method using image processing to assess the quality of cuts is discussed. On the basis of this method, it is shown that the deviations increase with the depth of the cut. Hence, it is suggested that deviations are caused by reflection. Two models for simulating the influence of different polarizations on the intensity distribution on the ablation ground for cutting and drilling are discussed.
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Hans Kurt Toenshoff, Hans Kurt Toenshoff, Andreas Ostendorf, Andreas Ostendorf, Thilo Wagner, Thilo Wagner, } "Structuring silicon with femtosecond lasers", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432500; https://doi.org/10.1117/12.432500
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